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半导体产业报告
中国集成电路制造工厂报告
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  • 在接下来的3年里,中国用于200mm及300mm Fab 的资本支出将适中,平均年均成长率预计不会超过10%。领先的资本支出厂商将会是英特尔,中芯国际,武汉新芯以及海力士-意法半导体。用于150mm fab的资本支出将会减少
     
  • 用于0.13um的300mm Fab 的新设备支出在接下来的数年内将成为主流。到2010年,300 mm设备支出将占到全部新设备支出的98%%
     
  • 中国已有Fab的产能增长速率正在放缓。2008年至2010年的年均产能增长率预计在18%左右(以200mm等量计算)。到2010年, 中国的全部fab产能预计将达到1,375KWPM (以200mm等量计算)
     
  • 在过去的5年里,中国已有的领先fab正在加速缩小与国际先进Fab的技术差距,尽管在未来5年内要完全赶上国际先进水平仍然显得很艰巨。0.18 μm到90 nm 的制程技术将成为主流,到2010年,估计60%的产能将使用0.18um到90nm的制程技术。到2010年45 nm 到 65 nm 的制程技术也可以提供生产
     
  • 在未来3年里,晶圆制造材料支出将稳定增长。到2010年, 中国将占到全球7%的晶圆制造材料支出。2007年到2009年的平均年均产能增长率高达43%

    在2008年2月, 国际半导体设备与材料协会特别推出了2008-2009年度《中国半导体晶圆制造市场预测》。本报告主要提供以下内容:

    中国半导体晶圆制造资本支出及产能预测
    - 概述
    - 晶圆制造投资结构与趋势
    - 资本支出预测
    - 产能发展现状及预测
    - 产能从海外转移至中国的趋势
    晶圆制造设备及材料
    - 概述
    - 晶圆制造设备及材料市场预测
    - 中国晶圆制造二手设备市场及预测
    - 本土晶圆制造设备及材料供应
    中国晶圆制造技术发展趋势
    - 概述
    - 中国领先晶圆制造工厂技术路线图
    - 中国领先晶圆制造工厂研发支出趋势

    价格信息 (含2010-2011更新版本,将于2011年第二季发布)
      多用户
    SEMI会员 $7500
    非会员 $10000

     报告样本下载

    China Semiconductor Wafer Fab and Foundry Outlook
     
  • Over the next three years in China, total capital expenditures by established 200 mm and 300 mm fabs will be moderate and annual growth is not expected to exceed 10% on average.The leading Capex spenders will be Intel, SMIC, XSMC and HSSL.Total capital expenditure by established 150 mm fabs will decline.
     
  • New 300 mm wafer fab equipment spending will dominate in the coming years with entry-level process technologies at the 0.13 μm node. 300 mm equipment spending will represent about 98% of total new equipment spending by 2010.
     
  • The rate at which China's established fabs are adding new capacity is slowing down.Average annual capacity growth from 2008 to 2010 is expected to be about 18% in 200 mm wafer equivalents. By 2010, China’s total fab capacity is expected to reach 1,375 k wafers per month (wpm) in 200 mm wafer equivalents.
     
  • Over the past five years, China's leading established fabs have narrowed the technology gap at an accelerated pace, though it will be very challenging for China's fabs to completely close that gap in the next five years. 0.18 μm to 90 nm process technologies will be the mainstream in China representing 60% of the total capacity by 2010. 45 nm to 65 nm process technology maybe also available at that time.
     
  • Fab material spending is expected to be steady over the next three years. By 2010, the China market is forecast to account for about 7% of global fab material spending.Average annual capacity growth from 2007 to 2009 may be as high as 43%.

    In February 2008, Semiconductor Equipment and Materials International (SEMI) published the China Semiconductor wafer Fab and Foundry Outlook. This comprehensive market research study covered but was not limited to:

    China Semiconductor Fab CAPEX and Capacity Outlook
    - Overview
    - Fab Investment Structure and Trend
    - Capital Spending Outlook
    - Capacity Development and Trend
    - Trend of Capacity Transferring from Overseas to China
    Fab Process Equipment and Material Supply
    - Overview
    - Fab Equipment and Material Market outlook
    - China Used Fab Process Equipment Market and Forecast
    - Local Sourcing of Fab Equipment and Mateerials
    Technology Trend of Semiconductor Fab in China
    - Overview
    - Technology Roadmaps of Leading Fabs in China
    - R&D Spending Trends by the Leading fabs in China

    Pricing Information (With 2010-2011 version free, will be published in Q2 2011)
      Multi User
    SEMI Member $7500
    Non-member  $10000


    Sample Report Download

 

 

 

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文章收入时间: 2009-12-09
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